LA-3000-F: Supporting Ultra Shallow Junctions

Features...

1. Xenon Flash Lamp  More...
2. 200mm & 300mm Wafers  More...
3. High Throughput  More...
4. Reliable Transfer System  More...

The LA-3000-F achieves ultra-rapid thermal processing of wafers while greatly suppressing thermal budget. For example, an activation without diffusing dopant is required for providing the ultra shallow junction (USJ), which is essential for manufacturing the devices of leading-edge 65nm and more advanced technical nodes. The flash lamp annealing technology of the LA-3000-F provides an optimal USJ formation, which has been impossible with conventional halogen lamp annealers.

1. Xenon Flash Lamp
The LA-3000-F uses a xenon lamp like camera flash and heats a wafer extremely rapidly with a burst of light of a few milliseconds, realizing a low thermal budget and preventing dopant from diffusion.

2. Handles 200mm and 300mm Wafers
The LA-3000-F has been designed as a bridge tool to handle 200mm and 300mm wafers, smoothing the transition from trial manufacture to mass production with 300mm wafers.

3. High Throughput
High throughput is achieved by heating the entire wafer surface at once.

4. Reliable Transfer System
The LA-3000-F is provided with a very reliable indexer and transfer unit. It also uses high purity arms for handling wafers of high temperature.